Influence of the high-temperature annealing on the anisotropy parameters of mobility and the anisotropy of the thermoelectromotive-drag of electrons by phonons in n−Si
DOI:
https://doi.org/10.15407/dopovidi2014.05.070Keywords:
anisotropy, high-temperature annealing, phonons, thermoelectromotive-dragAbstract
In the experiments with crystals of n−Si doped with impurities of phosphorus through the melt and by the nuclear transmutation, the influence of the high-temperature annealing (at T=1200 ∘C during 2 h) on the anisotropy parameter of mobility K=μ⊥/μ∥ and on the anisotropy parameter of the thermoelectromotive-drag of electrons by phonons M=αph∥/αph⊥ is investigated. It is shown that, in silicon crystals doped through the melt, the thermoannealing leads to a marked reduction in the value of M, whereas the value of this parameter increases by about 1.5 times in transmutation-doped samples. It is found that the anisotropy parameter of mobility K in the crystals of both types remains almost unchanged. The explanation of the results obtained is proposed.
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