DEFORMATION EFFECTS IN GERMANIUM CRYSTALS WITH HOLE CONDUCTIVITY
DOI:
https://doi.org/10.15407/dopovidi2023.03.031Keywords:
germanium, hole conductivity, galvanomagnetic effects, deformation effectsAbstract
Field dependencies of the Hall coefficient were obtained on p-Ge single crystals with resistivity r300K ≈ 16 Ohm·cm under the conditions || || [100] and || || [111] (the magnetic field is directed along [10]; is the current through the sample) at different pressures X. Fine structures of the field dependencies of the Hall coefficient associated with the anisotropy of the heavy hole band were observed at 77 K for samples of both crystallographic orientations, with the fine structure being smoothed out with increasing pressure. A distinct difference in the behavior of the Hall coefficient with pressure was observed between weak and stronger magnetic fields. Pressure dependences of resistivity and longitudinal magnetoresistance were measured at liquid nitrogen temperature on samples of both crystallographic orientations. Anisotropy of the tensoresistance and tenso-Hall effect was clearly pronounced both in the absence and presence of pressure. It was found that the main transformation of the deformed sphere of heavy holes of the initial crystal into ellipsoids occurs (in samples of both orientations) in the range of X ≤ 0.6—0.7 GPa, and in the case of a further increase in pressure, the parameters of the formed ellipsoids change relatively weakly. In samples of both crystallographic orientations, a non-zero longitudinal magnetoresistance was found, as well as its sharply pronounced anisotropy, which does not disappear up to the maximal pressures achieved in the experiment. An increasing trend in the longitudinal magnetoresistance with increasing pressure was observed under the conditions || || [100] and 77 K.
Downloads
References
Baranskii, P. I., Belyaev, A. E. & Gaidar, G. P. (2019). Kinetic effects in multi-valley semiconductors. Kyiv: Naukova Dumka (in Ukrainian).
Claeys, C. & Simoen, E. (2007). Germanium-based technologies: From materials to devices. 1 ed. Elsevier Science Publishing Company.
Oksanych, A. P. & Malovanyi, V. V. (2013). Development of technique and device for research of optical quality of germanium single crystal. Visnyk Kremenchutskoho natsionalnoho universytetu imeni Mykhaila Ostrohradskoho, No. 1(78), pp. 18-22 (in Ukrainian). http://www.kdu.edu.ua/statti/2013-1(78)/18.pdf
Chen, J., Zhang, X., Luo, Z., Wang, J. & Piao, H.-G. (2014). Large positive magnetoresistance in germanium. J. Appl. Phys., 116, No. 11, pp. 114511. https://doi.org/10.1063/1.4896173
Volodin, V. A., Kamaev, G. N., Gritsenko, V. A., Gismatulin, A. A., Chin, A. & Vergnat, M. (2019). Memristor ef-fect in GeO[SiO2] and GeO[SiO] solid alloys films. Appl. Phys. Lett., 114, No. 23, pp. 233104. https://doi.org/10.1063/1.5079690
Astankova, K. N., Volodin, V. A. & Azarov, I. A. (2020). Structure of germanium monoxide thin films. Semi-conductors, 54, No. 12, pp. 1555-1560. https://doi.org/10.1134/S1063782620120027
Saito, S., Al-Attili, A. Z., Oda, K. & Ishikawa, Y. (2016). Towards monolithic integration of germanium light sources on silicon chips. Semicond. Sci. Technol., 31, No. 4, pp. 43002 (19). https://doi.org/10.1088/0268-1242/31/4/043002
Baldassarre, L., Sakat, E., Frigerio, J., Samarelli, A., Gallacher, K., Calandrini, E., Isella, G., Paul, D.J., Ortolani, M. & Biagioni, P. (2015). Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates. Nano Lett., 15, No. 11, pp. 7225-7231. https://doi.org/10.1021/acs.nanolett.5b03247
Boucaud, P., Kurdi, M. El, Ghrib, A., Prost, M., de Kersauson, M., Sauvage, S., Aniel, F., Checoury, X., Beaudoin, G., Largeau, L., Sagnes, I., Ndong, G., Chaigneau, M. & Ossikovski, R. (2013). Recent advances in germanium emission. Photonics Research, 1, No. 3, pp. 102-109. https://doi.org/10.1364/PRJ.1.000102
Konle, J., Presting, H., Kibbel, H. & Banhart, F. (2002). Growth studies of Ge-islands for enhanced perfor-mance of thin film solar cells. Mater. Sci. Eng. B, 89, No. 1-3, pp. 160-165. https://doi.org/10.1016/S0921-5107(01)00824-8
Baranskii, P. I., Fedosov, А. V. & Gaidar, G. P. (2000). Physical properties of silicon and germanium crystals in the fields of effective external influence. Lutsk: Nadstyr’ya (in Ukrainian).
Patel, N. S., Monmeyran, C., Agarwal, A. & Kimerling, L. C. (2015). Point defect states in Sb doped germanium. J. Appl. Phys., 118, No. 15, pp. 155702. https://doi.org/10.1063/1.4933384
Bir, G. L. & Pikus, G. E. (1972). Symmetry and deformation effects in semiconductors. Moscow: Nauka (in Russian). https://ikfia.ysn.ru/wp-content/uploads/2018/01/BirPikus1972ru.pdf
Baranskii, P. I., Buda, I. S., Dakhovskii, I. V. & Kolomoets, V. V. (1977). Electrical and galvanomagnetic phe-nomena in anisotropic semiconductors. Kyiv: Naukova Dumka (in Russian).
Gaidar, G. P. (2016). Magneto- and tensoresistance of the p-Ge compensated crystals in the range of weak, intermediate and classically strong magnetic fields. Physics and Chemistry of Solid State, 17, No. 1, pp. 43-47. https://doi.org/10.15330/pcss.17.1.43-47
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2023 Reports of the National Academy of Sciences of Ukraine
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
