On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉
DOI:
https://doi.org/10.15407/dopovidi2019.05.067Keywords:
anisotropy parameter of mobility, germanium, silicon, tensoresistanceAbstract
In the framework of the theory of anisotropic scattering, the expressions useful for the practical application are obtained for many-valley semiconductors such as n-Ge and n-Si. These relations allow us to calculate the tensoresistance in saturation for crystallographic directions, where this effect is very small, by using the measurement results of tensoresistance in other crystallographic directions, where this effect has large values.
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