Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
DOI:
https://doi.org/10.15407/dopovidi2016.07.062Keywords:
silicon, isovalent impurity, germanium, thermoannealing, irradiation, fast neutrons, radiation hardnessAbstract
In n-type Cz−Si samples doped by the germanium isovalent impurity, a significant decrease in the efficiency of formation of thermodonors in the thermoannealing process is found, as well as an increase of the radiation hardness by order of magnitude under the irradiation of n-Si ⟨Ge⟩ by fast-pile neutrons is established.
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Baranskii P. I., Fedosov A. V., Gaidar G. P. Heterogeneities of semiconductors and urgent problems of the interdefect interaction in the radiation physics and nanotechnology, Kyiv–Lutsk: Lutsk State Technical University, 2007 (in Ukrainian).
Mil’vidskii M. G., Rytova N. S., Solov’eva E. V. The problems of crystallography: To 100-th anniversary of acad. A. V. Shubnikov, Моscow: Nauka, 1987: 215–232 (in Russian).
Brinkevich D. I., Markevich V. P., Murin L. I., Petrov V. V. Fizika i tekhnika poluprovodnikov, 1992, 26, No 4: 682–690 (in Russian).
Babich V. M., Valakh M.Ya., Kovalchuk V. B., Rudko G.Yu., Shakhraychuk N. I. Phys. Stat. Sol. (A),
, 117, No 2: K185–K188.
Babich V. M., Baran N. P., Zotov K. I., Kiritsa V. L., Kovalchuk V. B. Fizika i tekhnika poluprovodnikov,
, 29, No 1: 58–64 (in Russian).
Babich V. M., Bletskan N. I., Venger Е. F. Oxygen in silicon single crystals, Kiev: Interpres LТD, 1997
(in Russian).
Babich V. M., Baran N. P., Bugai A. A., Zotov K. I., Maximenko V. M. Ukr. J. Phys., 1992, 37, No 10:
–1556 (in Russian).
Gribov B. G., Bletskan N. I. Large single crystals of silicon, problems and perspectives of development.
Abstracts of the 1 st All-Union Conf. of “Physical and physico-chemical fundamentals of microelectronics”,
Vilnyus, Lithuania, 1987: 29–31 (in Russian).
Khirunenko L. I., Shakhovtsov V. I., Shinkarenko V. K., Shpinar L. I., Yaskovets I. I. Fizika i tekhnika poluprovodnikov, 1987, 21, No 3: 562–565 (in Russian).
Khirunenko L. I., Shakhovtsov V. I., Shumov V. V. Fizika i tekhnika poluprovodnikov, 1998, 32, No 2: 132–134 (in Russian).
Watkins G. D. IEEE Trans. Nucl. Sci., 1969, 16, No 6: 13–18.
Budtz-Jorgensen C. V., Kringhoj P., Larsen N. A., Abrosimov N. V. Phys. Rev. B, 1998, 58, No 3: 1110–1113.
Pomozov Yu. V., Sosnin M. G., Khirunenko L. I., Yashnik V. I., Abrosimov N. V., Shreder V., Khene M. Fizika i tekhnika poluprovodnikov, 2000, 34, No 9: 1030–1034.
Dolgolenko A. P., Litovchenko P. G., Varentsov M. D., Gaidar G. P., Litovchenko A. P. Phys. Stat. Sol. (B), 2006, 243, No 8: 1842–1852.
Goedecker S., Deutsch Th., Billard L. Phys. Rev. Lett., 2002, 88, No 23: 235501–235505.
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