Isothermal section of the Ti-Al- Ga system at 850 °С

Authors

  • N.N. Belyavina Taras Shevchenko National University of Kyiv
  • О.І. Nakonechna Taras Shevchenko National University of Kyiv
  • A.N. Kuryliuk Taras Shevchenko National University of Kyiv
  • V.A. Makara Taras Shevchenko National University of Kyiv

DOI:

https://doi.org/10.15407/dopovidi2020.06.030

Keywords:

aluminum, gallium, isothermal section, titanium, X-ray powder diffraction

Abstract

Alloys of the Ti—Al and Ti—Ga binary systems, as well as alloys of the Ti—Al—Ga ternary system, are obtained by the arc melting, annealed at 850 °С, and studied by the X-ray powder diffraction method. As a result, the existence of four binary aluminides (Ti3Al, TiAl, r-TiAl2, TiAl3) and eight binary galides (Ti3Ga, Ti2Ga, Ti5Ga3, Ti5Ga4, TiGa, Ti2Ga3, TiGa2, TiGa3) at 850 °С is confirmed It is shown that ternary compounds are not formed through the titanium, aluminum, and gallium interaction. TiAl—TiGa, TiAl2—TiGa2, and TiAl3—TiGa3 isostructural compounds form continuous solid solutions in the Ti—Al—Ga system, while Ti2Ga3, Ti5Ga4, and Ti2Ga binary galides form extended solid solutions up to 15, 6, and 10 at. % Al, respectively. Following phases are the equilibrium ones in the system: continuous Ti(Al,Ga)3, Ti(Al,Ga)2, Ti(Al,Ga) solid solutions, extended Ti2(Ga,Al)3, Ti5(Ga,Al)4, Ti2(Ga,Al) solid solutions, binary Ti3Al, Ti3Ga compounds, as well as the solid solution of the base of α-Ti metal (up to 15 at.% Al/Ga). As a result of this study, the isothermal section (850 °С) of the Ti—Al—Ga system is constructued in the full concentration range.

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References

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Published

28.03.2024

How to Cite

Belyavina, N. ., Nakonechna О. ., Kuryliuk, A. ., & Makara, V. . (2024). Isothermal section of the Ti-Al- Ga system at 850 °С . Reports of the National Academy of Sciences of Ukraine, (6), 30–36. https://doi.org/10.15407/dopovidi2020.06.030

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