Fascinated journeys into blue light

Authors

  • A.E. Belyaev Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Kyiv
  • V.A. Kochelap Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Kyiv

DOI:

https://doi.org/10.15407/visn2015.02.037

Keywords:

blue optical diodes, Nobel Prize, I. Akasaki, H. Amano, S. Nakamura

Abstract

Nobel Prize in Physics 2014 was awarded to Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura for the development of the blue optical diodes, which allowed the introduction of bright and energy-saving light sources.

References

Lashkarev V.Ye. Bulletin of the Russian Academy of Sciences: Physics. 1941. 5(4–5): 442.

Jezowski A., Danilchenko B., Bockowski M., Grzegory I., Krukowski S., Suski T. Thermal conductivity of GaN crystals in 4.2–300 K range. Solid State Commun. 2003. 128(2): 69. http://doi.org/10.1016/S0038-1098(03)00629-X

Danilchenko B.A., Paszkiewicz T., Wolski S., Jeżowski A., Plackowski T. Heat capacity and phonon mean free path of wurzite GaN. Appl. Phys. Lett. 2006. 89: 061901. http://doi.org/10.1063/1.2335373

Sukach G.A., Smertenko P.S., Oleksenko P.F., Nakamura S. Analysis of the active region of overheating temperature in green LEDs based on Group III nitrides. Technical Physics. 2001. 46(4): 438. http://doi.org/10.1134/1.1365468

Sukach G.A., Smertenko P.S., Oleksenko P.F., Nakamura S. Svetodiody i lazery. 2002. (1–2): 45.

Vitusevich S.A., Danylyuk S.V., Klein N., Petrychuk M.V., Kochelap V.A., Belyaev A.E., Tilak V. Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels. Appl. Phys. Lett. 2003. 82(5): 748. http://doi.org/10.1063/1.1542928

Danilchenko B.A., Zelensky S.E., Drok E., Vitusevich S.A., Danylyuk S.V., Klein N., Luth H., Belyaev A.E., Kochelap V.A. Hot-electron transport in AlGaN/GaN two-dimensional conducting channels. Appl. Phys. Lett. 2004. 85(22): 5421. http://doi.org/10.1063/1.1830078

Belyayeva A.Ye., Konakovoy R.V. Physical diagnostic methods in micro- and nanoelectronics. Kharkov: ISMA, 2011.

Komirenko S.M., Kim K.W., Kochelap V.A., Zavada J.M. Enhancement of hole injection for nitride-based light-emitting devices. Solid-State Electronics. 2003. 47: 169. http://doi.org/10.1016/S0038-1101(02)00314-3

Zavada J.M., Komirenko S.M., Kim K.W., Kochelap V.A. Efficient nitride-based short-wavelength emitters with enhanced hole injection. Institute of Physics: Conference Series. 2003. 174: 401.

Komirenko S.M., Kim K.W., Kochelap V A., Zavada J.M. Laterally doped heterostructures for III–N lasing devices. Appl. Phys. Lett. 2002. 81(24): 4617. http://doi.org/10.1063/1.1527985

Published

2015-02-21