Nanostructurization of Si and GaAs by acoustic cavitation in liquid nitrogen
DOI:
https://doi.org/10.15407/dopovidi2015.07.070Keywords:
II–V semiconductors, micro- and nanoscale pattern formation, photovoltaics, silicon, ultrasonic cavitationAbstract
The properties of the Si and GaAs samples subjected to cavitation impacts have been studied. It is shown that the high-intensity (15 W/cm2) high-frequency (1÷6 MHz) sonication in liquid nitrogen induces changes of the physical, chemical, and structural properties of the semiconductor surface. The optic and atomic force microscopy techniques, as well as energy dispersive X-ray spectroscopy and photoresponse spectroscopy, are used. The experimental study demonstrates the nanostructure formation and a change of the chemical composition at the semiconductor surface. It is found that a significant rise in the value and the expansion of a spectral range of photosensitivity take place after the cavitation treatment.
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