Mass spectrometric studies in the technology of manufacturing multi-element IR photodetectors based on indium antimonide
According to the materials of report at the meeting of the Presidium of the NAS of Ukraine, December 28, 2022
DOI:
https://doi.org/10.15407/visn2023.02.079Keywords:
IR photodetector, secondary ion mass spectrometry, ion doping, multilayer nanostructuresAbstract
A numerical procedure for calculating the current-voltage characteristics was developed, which was applied to the analysis of an InSb diode with a p-n junction, and the optimal doping profile of an electrically active impurity was determined. It has been shown that to achieve a high efficiency of photodetection, it is necessary to use multi-energy ion implantation with energies from 20 to 200 keV. The corresponding technology was implemented, and secondary ion mass spectrometry methods were used at different stages of the process, which made it possible to adjust the technological parameters, in particular, control the impurity distribution profiles. It has been established that oxides of indium and antimonide, as well as segregation of antimonide, lead to current leakages, additional processing modes have been found that lead to a decrease in such parasitic effects. The processes of passivation of diode structures have been studied and it has been shown that silicon nitride films are the optimal coatings. A technology has been developed and experimental models of photodiodes have been manufactured.
Cite this article:
Dubikovskyi O.V. Mass spectrometric studies in the technology of manufacturing multi-element IR photodetectors based on indium antimonide. Visn. Nac. Akad. Nauk Ukr. 2023. (2): 79—84. https://doi.org/10.15407/visn2023.02.079
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