Promising nanoscale ferroelectrics compatible with semiconductor technologies
Transcript of scientific report at the meeting of the Presidium of NAS of Ukraine, January 22, 2025
DOI:
https://doi.org/10.15407/visn2025.03.080Abstract
The report discusses the results of fundamental and applied research conducted at the I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine on the creation and technological development of ferroelectric nanomaterials based on simple oxides and nitrides, including films, particles, and their composites with polymeric materials. Thanks to these works, a new area of scientific research “silicon-compatible nanoferroelectrics” was initiated and a new group of ferroelectric nanomaterials was proposed, which are able to meet the needs of the modern semiconductor device manufacturing industry.
Cite this article:
Eliseev E.A. Promising nanoscale ferroelectrics compatible with semiconductor technologies. Visn. Nac. Akad. Nauk Ukr. 2025. (3): 80—89. https://doi.org/10.15407/visn2025.03.080
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