Development of Technology Profiles for the Transfer of Energy- and Resource Saving Technologies

Authors

  • V.S. Lysenko V.E. Lashkaryov Institute of Semiconductor Physics, the NAS of Ukraine, Kyiv
  • S.O. Yehorov Center of Technology Transfer, Academy of Technological Sciences of Ukraine, Kyiv
  • T.V. Pokshevnitskaya National Transport University, Kyiv

DOI:

https://doi.org/10.15407/scine11.01.049

Keywords:

technology offers, technology profile, technology requests, transfer technology network, transfer technology system

Abstract

The article deals with methodological framework for the development of technology profiles for the System of Energy- and Resource Saving Technology Transfer. The compliance with the methodology and standards of the European Innovation Relay Centers (the IRC network; since 2008, the EEN), the Russian Technology Transfer Network (RTTN), and Ukrainian Technology Transfer Network UTTN has been established to be the main principle of the development of technology requests and offers.

References

Lysenko, V.S., Yehorov, S.O., Hrytsai, A.Ya., and Rudnytskyi, Ye. A.: The Experience of Creation of National Integrated Technology Transfer Network in Ukraine. Mathematical Machines and Systems, 1, 76–80 (2013) (in Ukrainian).

Enterprise Europe Network, http://een.ec.europa.eu/services/technology-transfer

Russian Technology Transfer Network, http://www.rttn.ru/about

Lysenko, V.S. and Yehorov, S.O.: Preconditions and Methodological Framework for the Creation and Development of Technology Transfer Network in Ukraine. Mathematical Machines and Systems, 1, 46–51 (2008) (in Ukrainian).

Guidelines for the Preparation of Technology Offers. National Technology Transfer Network, http://www.nttn.org.ua/?idm=5&lng=1

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Published

2024-08-14

How to Cite

Lysenko, V., Yehorov, S., & Pokshevnitskaya, T. (2024). Development of Technology Profiles for the Transfer of Energy- and Resource Saving Technologies. Science and Innovation, 11(1), 49–54. https://doi.org/10.15407/scine11.01.049

Issue

Section

On the 10th Anniversary of the Journal