Gaidar, G.P. “Variations in Electrophysical Properties of Heavily Doped Single Crystals of N-Ge 〈As〉 under the Effect of Thermal Annealings”. Reports of the National Academy of Sciences of Ukraine, no. 6 (June 28, 2018): 58–66. Accessed July 11, 2026. https://nasu-periodicals.org.ua/index.php/dp/article/view/2804.