GAIDAR, G. Variations in electrophysical properties of heavily doped single crystals of n-Ge 〈As〉 under the effect of thermal annealings . Reports of the National Academy of Sciences of Ukraine, Kyiv, Ukraine, n. 6, p. 58–66, 2024. DOI: 10.15407/dopovidi2018.06.058. Disponível em: https://nasu-periodicals.org.ua/index.php/dp/article/view/2804. Acesso em: 9 may. 2026.