GAIDAR, G. On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 . Reports of the National Academy of Sciences of Ukraine, Kyiv, Ukraine, n. 5, p. 66–74, 2024. DOI: 10.15407/dopovidi2019.05.067. Disponível em: https://nasu-periodicals.org.ua/index.php/dp/article/view/2192. Acesso em: 18 apr. 2026.