GAIDAR, G.; PINKOVSKA, M.; STARCHYK, M. The ordering effects of an n-Si defect structure, induced by high fluences of ions with MeV energies . Reports of the National Academy of Sciences of Ukraine, Kyiv, Ukraine, n. 1, p. 39–50, 2021. DOI: 10.15407/dopovidi2021.01.039. Disponível em: https://nasu-periodicals.org.ua/index.php/dp/article/view/2021-1-6. Acesso em: 23 dec. 2024.