MICROWAVE ABSORPTION EFFECT OF NON-STOICHIOMETRIC SILICON CARBIDE
DOI:
https://doi.org/10.15407/dopovidi2025.02.065Keywords:
lattice parameters, solid solution of carbon in silicon carbide, microwave oven, frequency, microwave absorptionAbstract
The interaction of thermally expanded graphite and naphthocox with dispersed silicon at 1200 °C leads to the formation of a solid solution of carbon in silicon carbide, which is accompanied by an underestimation of the lattice parameter value relative to the standard value of β-SiC (а = 0.43596 nm). For the powders synthesized in the systems naphthcoke-silicon and thermally expanded graphite-silicon, the lattice parameters of β-SiC are 0.43560 nm and 0.43532 nm, respectively. Microwave absorption studies of the synthesized powders in a household microwave oven with an operating frequency of 2.45 GHz were carried out. The investigated silicon carbide powders absorb microwave radiation, which is accompanied by an intensive temperature increase due to the formed structure of solid solution of carbon in silicon carbide. It was discovered that a higher concentration of dissolved carbon accompanied by a lower lattice parameter of the synthesized silicon carbide contributes to more intense microwave absorption. It is found that lower lattice parameter of silicon carbide leads to better microwave absorption.
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